Prototype Active Silicon Sensor in 150 nm HR-CMOS technology for ATLAS Inner Detector Upgrade

@article{Rymaszewski2016PrototypeAS,
  title={Prototype Active Silicon Sensor in 150 nm HR-CMOS technology for ATLAS Inner Detector Upgrade},
  author={Piotr Rymaszewski and M. Barbero and Patrick Breugnon and S. Godiot and Laura Gonella and Tomasz Hemperek and Toko Hirono and Fabian H{\"u}gging and Hans Kr{\"u}ger and J. Liu and Patrick Pangaud and Ivan Peri{\'c} and A. Rozanov and A. Wang and Norbert Wermes},
  journal={Journal of Instrumentation},
  year={2016},
  volume={11},
  pages={C02045 - C02045}
}
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R{&}D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture… 

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