Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

@article{Karmarkar2004ProtonIE,
  title={Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers},
  author={A. P. Karmarkar and Bongim Jun and D. M. Fleetwood and R. D. Schrimpf and R. A. Weller and B. D. White and L. J. Brillson and U. K. Mishra},
  journal={IEEE Transactions on Nuclear Science},
  year={2004},
  volume={51},
  pages={3801-3806}
}
1.8 MeV proton radiation-induced degradation in high electron mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap layers is studied up to a fluence of 1/spl times/10/sup 15/ protons/cm/sup 2/. The thick GaN cap layer reduces sheet charge modulation induced by the surface states, as it electrostatically separates the active device… CONTINUE READING

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