Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

  title={Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices},
  author={Samuel James Bader and Hyunjea Lee and Reet Chaudhuri and Shimin Huang and Austin Hickman and Alyosha Christopher Molnar and Huili Grace Xing and Debdeep Jena and Han Wui Then and Nadim Chowdhury and Tom{\'a}s Palacios},
  journal={IEEE Transactions on Electron Devices},
Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal–oxide-semiconductor-based design (CMOS) circuitry necessary for complex control logic. For that reason, implementation of CMOS logic… Expand
6 Citations

Figures and Tables from this paper

Gallium nitride-based complementary logic integrated circuits
  • Zheyang Zheng, Li Zhang, +7 authors Kevin J. Chen
  • Materials Science
  • Nature Electronics
  • 2021
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS) technology is the current driving force of the integrated circuit industry. Silicon’s narrow bandgap has led toExpand
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a pointExpand
Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future
A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Expand
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Heterostructures Yosuke Sasama, 2 Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, and Yamaguchi Takahide 2, a) International Center for MaterialsExpand
High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers
High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers Reet Chaudhuri, a) Zhen Chen, David Muller, 3 Huili Grace Xing, 4, 3 andExpand
Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K
Field-plated vertical Ga2O3 rectifiers were operated up to 600 K with reverse breakdown voltage (V B) of 750 V, 950 V at 500 K and 1460 V at 400 K. The barrier height was 1.3 eV at 300 K and reducedExpand


High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.
This work experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages, paving the way for low power electronic system in 2D materials. Expand
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications.Expand
Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature
Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaNExpand
SiC-CMOS digital circuits for high temperature power conversion
Wide bandgap semiconductors allow for the potential of expanded temperature ranges for power and mixed-signal applications. Developments in a Silicon Carbide (SiC) CMOS integrated circuit processExpand
GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
High-performance wide-bandgap p-channel devices which can be monolithically integrated with established wide-bandgap n-channel devices are broadly desirable to expand the design topologies availableExpand
Demonstration of a 6H-SiC CMOS technology
Recent improvements in 6H-SiC enhancement-mode NMOS and PMOS device fabrication and performance have resulted in operational circuits up to 500/spl deg/C. These developments have now led to the firstExpand
Optimisation of 4H-SiC MOSFET Structures for Logic Applications
Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in creating active chemical sensors requires the development ofExpand
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerfulExpand
An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform
This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced byExpand
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF power amplification, GaN-based devices alsoExpand