Proposal for an optical laser producing light at half the Josephson frequency.

@article{Godschalk2010ProposalFA,
  title={Proposal for an optical laser producing light at half the Josephson frequency.},
  author={Frans Godschalk and Fabian Hassler and Yuli V. Nazarov},
  journal={Physical review letters},
  year={2010},
  volume={107 7},
  pages={
          073901
        }
}
We describe a superconducting device capable of producing laser light in the visible range at half of the Josephson generation frequency with the optical phase of the light locked to the superconducting phase difference. It consists of two single-level quantum dots embedded in a p-n semiconducting heterostructure and surrounded by a cavity supporting a resonant optical mode. We study decoherence and spontaneous switching in the device. 

Figures from this paper

Lasing at half the Josephson frequency with exponentially long coherence times

We describe a superconducting device capable of producing laser light in the visible range at half the Josephson generation frequency, with the optical phase of the light locked to the

Semiconductor–superconductor optoelectronic devices

  • S. BouscherD. PannaA. Hayat
  • Physics
    2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
  • 2017
Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take

Hybrid High-Temperature-Superconductor-Semiconductor Tunnel Diode

com-bined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity,similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement

Proposal for Plasmon Spectroscopy of Fluctuations in Low-Dimensional Superconductors.

An optical spectroscopy technique is employed to monitor the superconductivity and properties of superconductors in the fluctuating regime and shows that fluctuating Cooper pairs reveal a redshift of the plAsmon dispersion and an additional mechanism of plasmon scattering, which surpasses both the electron-impurity and the Landau dampings.

Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination

This work indicates that Josephson junctions based on highly doped InAs nanowires can be integrated in close proximity to photonic circuits, and indicates that such junctions can be used for optical frequency photon detection through thermal processes, and suggest limits to the sensitivity of such detectors.

Majorana fermions coupled to electromagnetic radiation

We consider a voltage-biased Josephson junction between two nanowires hosting Majorana zero modes which occur as topological protected zero-energy excitations at the junction. We show that two

Cooper-pair-based photon entanglement without isolated emitters

We show that the recombination of Cooper pairs in semiconductors can be used as a natural source of polarization-entangled photons, making use of the inherent angular momentum entanglement in the

Emission of Photon Multiplets by a dc-Biased Superconducting Circuit

G. C. Ménard1,†,∗ A. Peugeot1,† C. Padurariu, C. Rolland, B. Kubala, Y. Mukharsky, Z. Iftikhar, C. Altimiras, P. Roche, H. le Sueur, P. Joyez, D. Vion, D. Esteve, J. Ankerhold2,‡ and F. Portier1§ 1

Strain-tunable electronic structure, optical response, and high electron mobility of Bi2O2Se crystals

Newly fabricated semiconductor Bi2O2Se films exhibit excellent electron transport and optical properties, with potential application in optoelectronics. In this work, using first-principle

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se

, , , , , Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive

References

SHOWING 1-10 OF 22 REFERENCES

Quantum manipulation in a Josephson light-emitting diode

It is shown that the Josephson LED can both be used for on-demand production of entangled photon pairs and operated as a two-qubit gate and one can entangle particle spin with photon polarization and/or measure the spin by measuring the polarization.

Josephson light-emitting diode.

It is found that electrons and holes recombine producing photons at discrete energies as well as a continuous tail, and how to probe the coherence of these photons in a SQUID geometry via single-photon interference is discussed.

Luminescence of a cooper pair.

The recombination of a Cooper pair with two p-type carriers causes enhancement of the luminescence intensity and the calculated results of photon emission spectra explain characteristic features of observed signal in an recent experiment.

Single quantum dot nanowire LEDs.

Rep reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section is reported, demonstrating the potential of this system for single photon applications.

Quantum manipulation in a Josephson LED

We access the suitability of the recently proposed Josephson LED for quantum manipulation purposes. We show that the device can both be used for on-demand production of entangled photon pairs and

High quality factor photonic crystal nanobeam cavities

We investigate the design, fabrication, and experimental characterization of high quality factor photonic crystal nanobeam cavities in silicon. Using a five-hole tapered one-dimensional photonic

Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low

Ultrahigh-Q nanocavity with 1D photonic gap.

It is numerically demonstrated that ultrahigh-Q (2.0x10(8)) and wavelength-sized (V(eff) approximately 1.4(lambda/n)3) cavities can be achieved by employing only 1D periodicity.

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor–semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was

Quantum-dot-spin single-photon interface.

A classical single spin-photon interface is realized where the detection of a scattered photon with 300 ps time resolution projects the quantum dot spin to a definite spin eigenstate with fidelity exceeding 99%.