Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

@inproceedings{Kumar2001ProposalAD,
  title={Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications},
  author={Mamidala Jagadesh Kumar and D. Venkatesh Rao},
  year={2001}
}
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based… CONTINUE READING