Propagation layers for intra-chip wireless interconnection compatible with packaging and heat removal

@article{Guo2002PropagationLF,
  title={Propagation layers for intra-chip wireless interconnection compatible with packaging and heat removal},
  author={Xiaoling Guo and James Caserta and R. Li and B B Floyd and O K.O.},
  journal={2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)},
  year={2002},
  pages={36-37}
}
Inserting an aluminum nitride (AlN) layer which acts as a dielectric propagating medium between a silicon wafer containing integrated antennas and a metal chuck emulating the role of a heat sink improves the antenna power transmission gain by /spl sim/8 dB at 15 GHz. AlN, with its high thermal conductivity, also alleviates the heat removal problem. With a 760-/spl mu/m AlN layer, an on-chip wireless connection is demonstrated over a 2.2-cm distance, which is 3/spl times/ the previously reported… CONTINUE READING
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