Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow

@article{Takahashi2007ProofOG,
  title={Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow},
  author={Takuya Takahashi and Tomonori Nishimura and Li Chen and S. Sakata and Koji Kita and Akira Toriumi},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={697-700}
}
GeO2/Ge and high-k(LaYO3)/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge- intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm2/Vsec in FUSI/GeO2/Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved by inserting ultra-thin GeOx layer between metal and Ge, which enables us to operate metal… CONTINUE READING
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