Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

  title={Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion},
  author={Dirk V. P. McLaughlin and Joshua M. Pearce},
  journal={Metallurgical and Materials Transactions A},
The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride… 

InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century

The basic advantageous properties of InxGa1−xN materials, its growth technology and state-of-the-art application towards PV devices are highlighted and conclusions are drawn about the potential and future aspects of InXGa1 −xN material system towards terrestrial as well as space photovoltaic applications.

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

Photovoltaic (PV) technology could be a promising candidate for clean and green source of energy. The nanowire technology provides extra mileage over planar solar cells in every step from photon

Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions

Band gap engineering provides an opportunity to not only provide higher overall conversion efficiencies of the reference AM1.5 spectra but also customize PV device design for specific geographic

Low-cost Fabrication of Tunable Band Gap Composite Indium and Gallium Nitrides

These findings demonstrate a new and low-cost method for fabricating polycrystalline III-nitrides, which have a range of interesting properties that are highly sought after for many applications.

Design and Simulation of InGaN - Junction Solar Cell

The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work

Design and Simulation of InGaN p-n Junction Solar Cell

The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

III-Nitride-based heterostructures are well suited for the fabrication of various optoelec- tronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency

Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells

We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 °C). The influence



Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy

InGaN Solar Cells: Present State of the Art and Important Challenges

A review on the present state of the art of In-based solar cells is presented and the most important challenges toward the high-efficiency N materials are discussed in the context of the recent results.

Characteristics of InGaN designed for photovoltaic applications

This work addresses the required properties and device structures for an InGaN solar cell. Homojunction InGaN solar cells with a bandgap greater than 2.0 eV are specifically targeted due to material

Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates.

The direct growth of highly regular, single-crystalline nanopillar arrays of optically active semiconductors on aluminium substrates that are then configured as solar-cell modules for enabling highly versatile solar modules on both rigid and flexible substrates with enhanced carrier collection efficiency arising from the geometric configuration of the nanopillars.

Growth, fabrication, and characterization of InGaN solar cells

The InGaN alloy system offers a unique opportunity to develop high efficiency multi‐junction solar cells. In this study, single junction solar cells made of Inx Ga1–x N are successfully developed,

Complete composition tunability of InGaN nanowires using a combinatorial approach.

It is proposed that the exceptional composition tunability of InGaN nitride is due to the low process temperature and the ability of the nanowire morphology to accommodate strain-relaxed growth, which suppresses the tendency toward phase separation that plagues the thin-film community.

Design and characterization of GaN∕InGaN solar cells

We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%. GaN and high-band

Single and tandem axial p-i-n nanowire photovoltaic devices.

Current-voltage characteristics reveal clear and reproducible diode characteristics for the p-i-n and p-n SiNW devices and a novel single SiNW tandem solar cell consisting of synthetic integration of two photovoltaic elements with an overall p- i-n(+) -p(+)-i-N structure was prepared and shown to exhibit a Voc that is on average 57% larger than that of the single p-o-n device.