Progress in GaAs metamorphic HEMT technology for microwave applications

Abstract

This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.

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Cite this paper

@article{Smith2003ProgressIG, title={Progress in GaAs metamorphic HEMT technology for microwave applications}, author={P. M. Smith and Dianne M. Dugas and Kifung Chu and Kristian R. Nichols and K. H. George Duh and Jared Fisher and L. Mt Pleasant and Deguang Xu and Lewell F. Gunter and Anton Vera and Robert J. Lender and D. Meharry}, journal={25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.}, year={2003}, pages={21-24} }