Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation

@article{Cai2013ProgramII,
  title={Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation},
  author={Yu Cai and Onur Mutlu and Erich F. Haratsch and Ken Mai},
  journal={2013 IEEE 31st International Conference on Computer Design (ICCD)},
  year={2013},
  pages={123-130}
}
As NAND flash memory continues to scale down to smaller process technology nodes, its reliability and endurance are degrading. One important source of reduced reliability is the phenomenon of program interference: when a flash cell is programmed to a value, the programming operation affects the threshold voltage of not only that cell, but also the other cells surrounding it. This interference potentially causes a surrounding cell to move to a logical state (i.e., a threshold voltage range) that… CONTINUE READING
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