Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

@article{Yin2008ProgramEraseCO,
  title={Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory},
  author={Huaxiang Yin and Sunil Kim and Hyuck Lim and Yo-Sep Min and Chang Jung Kim and Ihun Song and Jaechul Park and S. Kim and Alexander Tikhonovsky and Jaewoong Hyun and Youngsoo Park},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={2071-2077}
}
Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV memory in advanced systems on panel (SOPs) urgently demand the assistance of new and functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered in the use of conventional Si or poly-crystalline Si materials, as well as to increase storage density with lower process cost. This paper reports the fully functional NV memory structure operated by an ionic amorphous oxide… CONTINUE READING

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