Prognostics approach for power MOSFET under thermal-stress aging

Abstract

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is die-attachment degradation, typical for discrete devices with lead-free… (More)

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