Profiling of optically active defects

Abstract

A new method for profiling of optically active defects is presented. Traps in a depletion region are illuminated with chopped extrinsic light(h\nu < E_{g}). The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer. The trap profile is obtained by changing the bias voltage which moves the active traps with… (More)

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