Processing of MEMS gyroscopes on top of CMOS ICs

@article{Witvrouw2005ProcessingOM,
  title={Processing of MEMS gyroscopes on top of CMOS ICs},
  author={Ann Witvrouw and Anish Mehta and Agnes Verbist and Bert Du Bois and Steven Van Aerde and J. Ramos-Martos and J. Ceballos and Arnaud Ragel and J. Mora and M. A. Lagos and Andrea Arias and J. M. Hinoiosa and Johannes Spengler and C. Leinenbach and T. Fuchs and S. Kronmuller},
  journal={ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.},
  year={2005},
  pages={88-89 Vol. 1}
}
Integrated 10 /spl mu/m thick poly-SiGe gyroscopes are processed on top of an 8" standard 0.35 /spl mu/m CMOS wafer with 5 metal levels by using an advanced plasma-enhanced chemical vapor deposition multi-layer technology. The gyroscopes are free-moving with Q-factors for the drive mode up to 10000 at the pressure of 0.8 mTorr while the CMOS chip is fully functional. 
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