Process dependence of AC/DC PBTI in HKMG n-MOSFETs

  title={Process dependence of AC/DC PBTI in HKMG n-MOSFETs},
  author={Wen Fung Liu and Giuseppe La Rosa and C. E. Tian and S. Boffoli and Fernando J. Guar{\'i}n and W. L. Lai and V. Narayanan and Himanshu Kothari and Min-Sik Jin and S. Uppal and William McMahon},
  journal={2014 IEEE International Reliability Physics Symposium},
It is well known that n-MOSFET aging under AC and DC Positive Bias Temperature Instability (PBTI) is strongly dependent on the adopted HK stack processes. In this work it is reported, for the first time, a detailed analysis of the nature of the PBTI degradation and recovery under DC and AC conditions by a novel stress and test methodology. Our observations over two HK processes (A & B) support the PBTI physical picture of two uncorrelated independent contributions to the PBTI damage. Namely… CONTINUE READING
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