Process dependence of AC/DC PBTI in HKMG n-MOSFETs

@article{Liu2014ProcessDO,
  title={Process dependence of AC/DC PBTI in HKMG n-MOSFETs},
  author={Wen Fung Liu and Giuseppe La Rosa and C. E. Tian and S. Boffoli and Fernando J. Guar{\'i}n and W. L. Lai and V. Narayanan and Himanshu Kothari and Min-Sik Jin and S. Uppal and William McMahon},
  journal={2014 IEEE International Reliability Physics Symposium},
  year={2014},
  pages={XT.6.1-XT.6.5}
}
It is well known that n-MOSFET aging under AC and DC Positive Bias Temperature Instability (PBTI) is strongly dependent on the adopted HK stack processes. In this work it is reported, for the first time, a detailed analysis of the nature of the PBTI degradation and recovery under DC and AC conditions by a novel stress and test methodology. Our observations over two HK processes (A & B) support the PBTI physical picture of two uncorrelated independent contributions to the PBTI damage. Namely… CONTINUE READING
2 Citations
11 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-2 of 2 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 11 references

The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

  • T. Grasser, et. Al
  • IRPS
  • 2007
1 Excerpt

Similar Papers

Loading similar papers…