Process and reliability of SF6/O2 plasma etched copper TSVs

@article{Filipovic2014ProcessAR,
  title={Process and reliability of SF6/O2 plasma etched copper TSVs},
  author={Lado Filipovic and Roberto Lacerda de Orio and Siegfried Selberherr},
  journal={2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)},
  year={2014},
  pages={1-4}
}
The formation of a TSV for three-dimensional interconnects using SF<sub>6</sub>/O<sub>2</sub> plasma is explored. Adjusting the O<sub>2</sub> gas concentration to 45 sccm, while the SF<sub>6</sub> concentration is set to 35 sccm, produced the best combination of chemical and physical etching to provide sidewall angles of 88°. Three TSV aspect ratios are etched (5/58, 10/100, and 20/100 μm) and subsequently analyzed using the finite element method. The TSVs' series resistance, current density… CONTINUE READING

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15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014

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