Process Variations Process Variations


    The parameters of individual transistors vary from: „ Lot to lot (interprocess variation) „ Wafer to wafer (interprocess variation) „ Die to die (intraprocess variation) The observed random distribution of identically drawn devices is caused by: „ Variations in process parameters, e.g., Impurity concentration densities Oxide thicknesses Diffusion Depths… (More)


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    @inproceedings{ProcessVP, title={Process Variations Process Variations}, author={} }