Process Modification for Improved Low Temperature CMOS Performance

@inproceedings{Hwang1996ProcessMF,
  title={Process Modification for Improved Low Temperature CMOS Performance},
  author={Chi-Chuan Hwang and C. Jenq and Bob Hammond and Jon Gillick and Jason C. S. Woo},
  year={1996}
}
Only minimal performance improvement is achievable when a standard, room-temperature CMOS component is cooled down to low temperatures. However, by modifying the process flow, a 2-3x increase in performance is possible. TCAD tools can be used to study and optimize an original, room temperature CMOS process for low temperature operation. By adjusting the low temperature threshold voltage to a room temperature value, CMOS ring oscillator delays drop in half. Even greater improvement is possible… CONTINUE READING