Problems associated with parallel performance of high current semiconductor switches and their remedy

Abstract

The development in the technology of power semiconductors results in their application in FACTS devices, static switches, hybrid switches, HVDC, and high power converters. Since the nominal current of such devices does not satisfy high power applications, in order to increase the current ratings, switches should be paralleled. In this paper, the behavior of the paralleling of devices such as diodes, IGBTs, MOSFETs, and BJTs are discussed. A method is presented to improve parallel performance of high current semiconductors as well. The validity of proposed method is investigated in both simulation and implementation.

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Cite this paper

@article{Abdi2008ProblemsAW, title={Problems associated with parallel performance of high current semiconductor switches and their remedy}, author={Babak Abdi and A. H. Ranjbar and Kaveh Malekian and Jafar Milimonfared and G . B . Gharehpetian}, journal={2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion}, year={2008}, pages={1379-1383} }