Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

  title={Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance},
  author={Ryan M Jock and S. Shankar and Alexei M. Tyryshkin and Jian-hua He and K. Eng and Kenton D. Childs and Lisa A. Tracy and Michael P. Lilly and Malcolm S. Carroll and Stephen A. Lyon},
  journal={Applied Physics Letters},
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow… 
A low-disorder metal-oxide-silicon double quantum dot
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably
Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is
Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.
A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges.
Band offset and negative compressibility in graphene-MoS2 heterostructures.
This work uses electron transport to characterize monolayer graphene-multilayer MoS2 heterostructures and is able to interpret their measurements quantitatively by accounting for disorder and using the random phase approximation for the exchange and correlation energies of both Dirac and parabolic-band two-dimensional electron gases.
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants.
The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.
Electron Spin Resonance on Si/SiGe Quantum Dots
Qubits in a solid state environment are promising candidates for large scale quantum computing, but they usually suffer short decoherence times. Electron spin qubits in silicon quantum dots are
This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. This work was supported by the Sandia National Laboratories
Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach
We used the solutions from the variational path integral to suggest a function form of the bandtail states of a two-dimensional system. The analytic solutions provide two regimes, i.e., the ground
Revised theoretical limit of subthreshold swing in field-effect transistors
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the
Generalized Boltzmann relations in semiconductors including band tails
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only


Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable
Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot.
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state
Spectroscopy of few-electron single-crystal silicon quantum dots.
The fabrication of a few-electron quantum dot in single-crystal silicon that does not contain any heterogeneous interfaces is reported, and the resulting confinement produces novel effects associated with energy splitting between the conduction band valleys.
Spin relaxation and coherence times for electrons at the Si/SiO2 interface
While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2)
Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method
The electron mobility in the inversion layer of a metal–oxide semiconductor field effect transistor formed on the (100) silicon surface is calculated by using a Monte Carlo approach which takes into
Electronic states at the silicon-silicon dioxide interface
Abstract Localized electronic states at the silicon/silicon dioxide interface are reviewed, and the current knowledge of interface states and fixed oxide charges, and how they influence the
Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices
Small‐signal conductance peaks in metal‐oxide‐semiconductor (MOS) devices have been found experimentally to be much wider than predicted by the surface‐state continuum model of Lehovec. This
Potential fluctuations in heterostructure devices.
  • Nixon, Davies
  • Medicine
    Physical review. B, Condensed matter
  • 1990