Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

@article{Jock2012ProbingBS,
  title={Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance},
  author={Ryan M Jock and S. Shankar and Alexei M. Tyryshkin and Jian-hua He and K. Eng and Kenton D. Childs and Lisa A. Tracy and Michael P. Lilly and Malcolm S. Carroll and Stephen A. Lyon},
  journal={Applied Physics Letters},
  year={2012},
  volume={100},
  pages={023503}
}
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow… 
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