Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

@article{Everaerts2013PrintedIG,
  title={Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.},
  author={Ken Everaerts and Li Zeng and Jonathan W. Hennek and Diana I Camacho and Deep Jariwala and Michael J. Bedzyk and Mark C. Hersam and Tobin J. Marks},
  journal={ACS applied materials \& interfaces},
  year={2013},
  volume={5 22},
  pages={
          11884-93
        }
}
Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes… 
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