Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

@article{Everaerts2013PrintedIG,
  title={Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.},
  author={Ken Everaerts and Li Zeng and Jonathan W. Hennek and Diana I Camacho and D. M. Jariwala and Michael J Bedzyk and Mark C. Hersam and Tobin J Marks},
  journal={ACS applied materials & interfaces},
  year={2013},
  volume={5 22},
  pages={11884-93}
}
Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-2 of 2 references

Thin Solid Films

  • F.-H. Chen, J.-L. Her, Y.-H. Shao, W.-C. Li, Y. H. Matsuda, T.-M. Pan
  • 2013

Non - Cryst

  • H. Hosono, K. Nomura, Y. Ogo, T. Uruga, T. J. Kamiya
  • Solids
  • 2008

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