Corpus ID: 189033174

Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode

@inproceedings{Koike2003PrimaryCO,
  title={Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode},
  author={H. Koike and T. Nakagawa and T. Sekigawa and E. Suzuki and T. Tsutsumi},
  year={2003}
}

H. Koike, T. Nakagawa, +2 authors T. Tsutsumi

Published 2003

Materials Science

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A compact model of double-gate (DG) MOSFETs is discussed considering…-fully-depleted DG M O SFETs-with Si-channel thickness of 3-20 nm,-four-terminal operation with the independent front and back gate,-double charge-sheet model with no current mixing in the channel , and-drift-diffusion electron transport without velocity saturation.