Prevention of Radiation Induced Latchup in Commercially Available CMOS Devices

@article{Huffman1980PreventionOR,
  title={Prevention of Radiation Induced Latchup in Commercially Available CMOS Devices},
  author={D. D. Huffman},
  journal={IEEE Transactions on Nuclear Science},
  year={1980},
  volume={27},
  pages={1436-1441}
}
  • D. D. Huffman
  • Published 1980 in IEEE Transactions on Nuclear Science
Commercially available bulk CMOS devices have been found susceptible to transient radiation induced latchup particularly when there is little or no current limiting in the power supply. A resistor in the power supply line of sufficient size to prevent latchup may cause excessive voltage drop when the device is operating dynamically. A series inductor in the power supply line does not have this drawback. An inductor-resistor-capacitor (LRC) network was developed to prevent latchup in HM-6551… CONTINUE READING