Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?


In recent years, a low pressure transition around P3 GPa exhibited by the A2B3-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman… (More)
DOI: 10.1088/0953-8984/28/10/105401