Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures

@inproceedings{Tischler1998PressureTO,
  title={Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures},
  author={Joseph G. Tischler and Sushil Kumar Singh and H. A. Nickel and Gerhard Herold and Zhao Xia Jiang and Bruce D. McCombe and Bernard A. Weinstein},
  year={1998}
}
We report studies of the free carrier and donor-bound FIR excitations of a confined electron gas in modulation doped GaAs/AlGaAs quantum wells (QW) as a function of the QW electron density. Applied pressure is used to tune the electron density via the G±X well±barrier crossover. As electrons are removed from the QWs, we observe successively the quenching of… CONTINUE READING