Pressure-Induced Structural Transformations of ZnO Nanowires Probed by X-ray Diffraction

@inproceedings{Dong2012PressureInducedST,
  title={Pressure-Induced Structural Transformations of ZnO Nanowires Probed by X-ray Diffraction},
  author={Zhaohui Dong and Kirill K. Zhuravlev and Stephen A Morin and Linsen Li and Song Zhu Jin and Yang Song},
  year={2012}
}
As an important wide band gap semiconductor (Eg = 3.37 eV), ZnO has a wide range of applications, such as in piezoelectric transducers, chemical sensors, optical coatings, photovoltaics, and ceramics. 3 In contrast to the corresponding bulk counterparts, nanostructured ZnO has enhanced electronic, and photoconducting properties. Because of the unique crystal quality and photonic properties, in particular, 1D ZnO nanomaterials have been used as functional units in the fabrication of electronic… CONTINUE READING