Pressure-Induced Structural Phase Transition and Metallization of CrCl3 under Different Hydrostatic Environments up to 50.0 GPa.

@article{Hong2022PressureInducedSP,
  title={Pressure-Induced Structural Phase Transition and Metallization of CrCl3 under Different Hydrostatic Environments up to 50.0 GPa.},
  author={Meiling Hong and Lidong Dai and Haiying Hu and Xinyu Zhang and Chuang Li and Yu He},
  journal={Inorganic chemistry},
  year={2022}
}
High-pressure structural, vibrational, and electrical transport properties of CrCl3 were investigated by means of Raman spectroscopy, electrical conductivity, and high-resolution transmission electron microscopy under different hydrostatic environments using the diamond anvil cell in conjunction with the first-principles theoretical calculations up to 50.0 GPa. The isostructural phase transition of CrCl3 occurred at 9.9 GPa under nonhydrostatic conditions. As pressure was increased up to 29.8… 

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References

SHOWING 1-10 OF 46 REFERENCES

High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

The vibrational, electrical and structural properties of gallium sulfide (Ga2S3) were explored by Raman spectroscopy, electrical conductivity measurements, high-resolution transmission electron

Pressure-induced irreversible amorphization and metallization with a structural phase transition in arsenic telluride

The structural, vibrational and electronic properties of α-As2Te3 in different pressure environments were investigated using a diamond-anvil cell (DAC) in conjunction with AC impedance spectroscopy,

Pressure-induced phase transitions of ZnSe under different pressure environments

The structural, vibrational and electronic properties of ZnSe under different pressure environments up to ∼40.0 GPa were investigated using a diamond anvil cell in conjunction with ac impedance

Phase Transition and Metallization of Orpiment by Raman Spectroscopy, Electrical Conductivity and Theoretical Calculation under High Pressure

These high-pressure behaviors of orpiment present some crucial information on the structural phase transition, metallization, amorphization and superconductivity for the A2B3-type of engineering materials at high pressure.

Characterization of the pressure-induced phase transition of metallization for MoTe2 under hydrostatic and non-hydrostatic conditions

This study reported a pressure-induced metallization for molybdenum tellurium under different pressure environments up to ∼25.9 GPa through a series of experiments and first-principles theoretical

Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2

We report the effect of strong spin orbit coupling inducing electronic topological and semiconductor to metal transitions on the thermoelectric material AgBiSe2 at high pressures. The synchrotron

Characterization of metallization and amorphization for GaP under different hydrostatic environments in diamond anvil cell up to 40.0 GPa.

High-pressure phase stability of gallium phosphide was explored under different hydrostatic environments up to 40.0 GPa in a diamond anvil cell and the hysteresis effect of the high- pressure phase transition of a sphalerite-structure compound under a hydrostatic environment was disclosed.

Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles studies

High pressure Raman spectroscopy of bulk 2H-MoTe2 up to  ∼29 GPa is shown to reveal two phase transitions, which are analyzed using first-principles density functional theoretical calculations and show that this is an isostructural semiconductor to a semimetal transition.

Deviatoric stresses promoted metallization in rhenium disulfide

The structural, vibrational and electronic properties of ReS2 were investigated up to ~34 GPa by Raman spectroscopy, AC impedance spectroscopy, atomic force microscopy and high-resolution

Pressure-induced permanent metallization with reversible structural transition in molybdenum disulfide

This report presents a pressure-induced permanent metallization for MoS2 under non-hydrostatic conditions. Impedance and Raman spectra were measured to study the pressure-induced structural and