Pressure‐induced instability of deep acceptor states in ZnSe

@inproceedings{li2008PressureinducedIO,
  title={Pressure‐induced instability of deep acceptor states in ZnSe},
  author={mohan. li and David Strachan and M. C. Tamargo and Bernard A. Weinstein},
  year={2008}
}
Photoluminescence experiments of ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that the deep states arising from these impurities become unstable between 15–25 kbar. The implications of this for current models are discussed.