Present status of amorphous In-Ga-Zn-O thin-film transistors.

@article{Kamiya2010PresentSO,
  title={Present status of amorphous In-Ga-Zn-O thin-film transistors.},
  author={Toshio Kamiya and Kenji Nomura and Hideo Hosono},
  journal={Science and technology of advanced materials},
  year={2010},
  volume={11 4},
  pages={
          044305
        }
}
  • Toshio Kamiya, Kenji Nomura, Hideo Hosono
  • Published in
    Science and technology of…
    2010
  • Materials Science, Medicine
  • The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon… CONTINUE READING

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