Preparation of mixed Al , 03 / Si 02 thin films supported on Mo ( 100 )

Deposition of metallic Al onto a SiO, thin film, supported on a Mo( 100) substrate, at 100 K, followed by annealing to 1200 K, leads to the formation of a homogeneous A1203/Si02 film. In the temperature regime from 100 to 800 K, Al is completely oxidized and metallic Si is formed. The important step for the fo~ation of Si-O-Al bonds is the concerted… CONTINUE READING