Preparation and operation characteristics of nano-scale channel length vertical structure Zinc Oxide Thin Film Transistor

Abstract

At room temperature, using with substrate of quartz glass, ZnO as active layer, we designed and prepared Zinc Oxide Thin Film Transistor with the structure of Ag/ZnO/Al/ZnO/Ag. The device shows the advantage of large operation electric current, low operate voltage and high charge carriers mobility and so on. When the device works, the drain could achieve at… (More)

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