Ferroelectric and domain properties of 0.55Pb(Sc 1/2 Ta 1/2 )O 3 -0.45PbTiO 3 thin films
- Hong Liu, Xia
0.95Pb(Sc<inf>0.5</inf>Ta<inf>0.5</inf>)O<inf>3</inf>-0.05PbTiO<inf>3</inf>(PSTT5) thin films were prepared on LaNiO<inf>3</inf>(LNO)/SiO<inf>2</inf>/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.