Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology

Abstract

0.95Pb(Sc<inf>0.5</inf>Ta<inf>0.5</inf>)O<inf>3</inf>-0.05PbTiO<inf>3</inf>(PSTT5) thin films were prepared on LaNiO<inf>3</inf>(LNO)/SiO<inf>2</inf>/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.

4 Figures and Tables

Cite this paper

@article{Li2009PreparationAC, title={Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology}, author={Xuedong Li and Qiang Chen and Yucheng Sun and Yuanyuan Zhou and Jiliang Zhu and Dingquan Xiao and Jianguo Zhu}, journal={2009 18th IEEE International Symposium on the Applications of Ferroelectrics}, year={2009}, pages={1-3} }