Preparation and characterization of porous silica xerogel film for low dielectric application

@inproceedings{Hong1997PreparationAC,
  title={Preparation and characterization of porous silica xerogel film for low dielectric application},
  author={J. Hong and Hee-sun Yang and Moon-Ho Jo and Hyung-Ho Park and Se-Young Choi},
  year={1997}
}
Abstract SiO 2 xerogel thin film with a low dielectric constant was successfully prepared by a two-step acid-base catalyst procedure and successive surface modification with trimethylchlorosilane (TMCS). Only 15% porosity could be obtained without surface modification but with surface modification the porosity increased to 50%. These porosity values correspond to measured dielectric constants of 3.95 and 2.45, respectively. The low dielectric constant was revealed to depend mainly on the porous… CONTINUE READING

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