Preliminary Study of Suppression of Backscattering Phenomenon from Drain Region on Double Gate MOSFET's Characteristics

@article{Tsutsumi2007PreliminarySO,
  title={Preliminary Study of Suppression of Backscattering Phenomenon from Drain Region on Double Gate MOSFET's Characteristics},
  author={Toshiyuki Tsutsumi and Kazuhisa Tomizawa},
  journal={2007 Digest of papers Microprocesses and Nanotechnology},
  year={2007},
  pages={114-115}
}
In this paper, we have proposed a suppression method of a backscattering phenomenon from a drain region of a Double Gate MOSFET (DG-MOSFET), and tried to analyze quantitatively the backscattering effect on the DG-MOSFET's characteristics. Moreover, it is confirmed that the suppression of backscattering phenomenon largely improves the AC characteristics such as cutoff frequency, although the backscattering phenomenon does not largely influence the DC characteristics such as drain current in… CONTINUE READING

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  • T. Tsutsumi, K. Tomizawa, Dig
  • MNC,
  • 2006
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