Preferential growth of ZnO thin films by the atomic layer deposition technique.

@article{Pung2008PreferentialGO,
  title={Preferential growth of ZnO thin films by the atomic layer deposition technique.},
  author={S. H. Pung and K. Y. Choy and Xianghui Hou and Chongxin Shan},
  journal={Nanotechnology},
  year={2008},
  volume={19 43},
  pages={435609}
}
Preferred orientation of ZnO thin films deposited by the atomic layer deposition (ALD) technique could be manipulated by deposition temperature. In this work, diethyl zinc (DEZn) and deionized water (H(2)O) were used as a zinc source and oxygen source, respectively. The results demonstrated that (10.0) dominant ZnO thin films were grown in the temperature range of 155-220 °C. The c-axis crystal growth of these films was greatly suppressed. Adhesion of anions (such as fragments of an ethyl group… CONTINUE READING
Highly Cited
This paper has 20 citations. REVIEW CITATIONS

From This Paper

Topics from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 14 extracted citations

Similar Papers

Loading similar papers…