Predictive Simulation of AlGaN/GaN HEMTs

  title={Predictive Simulation of AlGaN/GaN HEMTs},
  author={Stanislav Vitanov and Vassil Palankovski and Shayma Adil Murad and T. Rodle and R{\"u}diger Quay and Siegfried Selberherr},
  journal={2007 IEEE Compound Semiconductor Integrated Circuits Symposium},
For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved. 
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Influence of Surface States on the Two-Dimensional Electron Gas in AlGaN/GaN Heterojunction Field-Effect Transistors

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