Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

@article{Patil2009PrecursorPI,
  title={Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics},
  author={Nishad Patil and Jos{\'e} R. Celaya and Diganta Das and Kai F. Goebel and Michael G. Pecht},
  journal={IEEE Transactions on Reliability},
  year={2009},
  volume={58},
  pages={271-276}
}
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed… 
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