Precision of Silicon Oxynitride Refractive-Index Profile Retrieval Using Optical Characterization

  title={Precision of Silicon Oxynitride Refractive-Index Profile Retrieval Using Optical Characterization},
  author={V'it Kancl'ivr and Jan V'aclav'ik and Karel vZ'idek},
  journal={Acta Physica Polonica A},
Layers with gradient refractive-index profile are an attractive alternative to conventional homogeneous stack coatings. However, the optical characterization and monitoring of the graded refractive-index profile is a complex issue, which has been typically solved by using a simplified model of mixed materials. Although this approach provides a solution to the problem, the precision, which can be expected from optical characterization of the refractive index gradient, remains unclear. In this… 

Figures and Tables from this paper



Graded refractive index silicon oxynitride thin film characterized by spectroscopic ellipsometry

A graded refractive index silicon oxynitride (SiOxNy) thin film was prepared on a silicon substrate by ion assisted deposition. Spectroscopic ellipsometry (SE) was used to optically analyze the film.

Optical characterization of hybrid antireflective coatings using spectrophotometric and ellipsometric measurements.

A hybrid antireflective coating combining homogeneous layers and linear gradient refractive index layers has been deposited using different techniques to detect errors in processes of deposition.

Fabrication and characterization of graded refractive index silicon oxynitride thin films

Oxynitride films with continuous variations of the optical index with thickness were grown by electron cyclotron resonance plasma-enhanced chemical vapor deposition using silane as a silicon

Refractive index determination of SiO2 layer in the UV/Vis/NIR range: spectrophotometric reverse engineering on single and bi-layer designs

In this paper we use spectrophotometric measurements and a Clustering Global Optimization procedure to determine the complex refractive index of SiO2 layer from 250 nm to 1250 nm. A special

Ellipsometric calculations for nonabsorbing thin films with linear refractive-index gradients

The measurement of the refractive index n and the physical thickness t of a homogeneous thin film by ellipsometry is a well-established technique. Ellipsometry also opens up the possibility of

Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering.

The extinction coefficient and refractive index of the films were directly dependent on the N(+) ion-to-atom arrival ratio, assisted ion energy, film growth rate, and indicated a correlation with film stoichiometry and disorder.

Estimate of the degree of inhomogeneity of the refractive index of dielectric films from spectroscopic ellipsometry.

This work proposes a method of analysis of ellipsometric data for homogeneous and slightly inhomogeneous films that are deposited on transparent substrates that is able to determine not only the average index and the thickness but also the degree of inhomogeneity of the films by spectroscopic ellipsometry at variable angles of incidence.