Precise and Simple Methods for Detection of Initial Defects in 1.2 nm Gate Dielectrics Based on Nonlinear Conductions

A sensitive and simple method to detect process-induced initial defects in fresh ultra-thin gate dielectrics is proposed, where only variations of gate leakage currents are estimated at a low gate voltage. This method proves to be a powerful tool for choosing the suitable manufacturing conditions to suppress the initial defects and predicting reliabilities… CONTINUE READING