Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer

@article{Wang2018PreciseTG,
  title={Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer},
  author={Jiaxing Wang and Jonas Kapraun and Emil Kolev and Jipeng Qi and Kevin T. Cook and Constance J. Chang-Hasnain},
  journal={2018 Conference on Lasers and Electro-Optics (CLEO)},
  year={2018},
  pages={1-2}
}
We report a 2-step growth for 940-nm VCSELs on DBRs capped by a novel protective GaAsP layer, desorbed during the secondary growth including laser region to yield precise high quality VCSELs with sub-mA threshold. 

Figures from this paper.

Citations

Publications citing this paper.

Air-Cavity Dominated HCG-VCSEL with a Wide Continuous Tuning

  • 2018 Conference on Lasers and Electro-Optics (CLEO)
  • 2018
VIEW 1 EXCERPT
CITES BACKGROUND