Power semiconductor device figure of merit for high-frequency applications

@article{Baliga1989PowerSD,
  title={Power semiconductor device figure of merit for high-frequency applications},
  author={B. Baliga},
  journal={IEEE Electron Device Letters},
  year={1989},
  volume={10},
  pages={455-457}
}
  • B. Baliga
  • Published 1989 in IEEE Electron Device Letters
A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the square root of the operating frequency and approximately in proportion to the output power. By relating the device power dissipation to the intrinsic material parameters, it is shown that the power loss can be reduced by using… CONTINUE READING
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References

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Physical limitations on frequency and power parameters of transistors

  • P. A. Piacente
  • IEEE Electron Device Lett .
  • 1989

Power MOSFETs for synchronous rectification

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  • 1972

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