Power electronics on InAlN/(In)GaN: Prospect for a record performance

@article{Kuzmik2001PowerEO,
  title={Power electronics on InAlN/(In)GaN: Prospect for a record performance},
  author={Jan Kuzmik},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={510-512}
}
  • Jan Kuzmik
  • Published 2001 in IEEE Electron Device Letters
We compare basic physical parameters of Al/sub 0.2/Ga/sub 0.8/N-GaN quantum well with In/sub 0.17/Al/sub 0.83/N/GaN and In/sub 0.17/Al/sub 0.83/N/In/sub 0.10/Ga/sub 0.90/N quantum well parameters, respectively. It is shown that in comparison to conventional AlGaN/GaN approach, structures based on InAlN/(In)GaN should exhibit two to three times higher quantum well polarization-induced charge. We use high electron mobility transistors (HEMT) analytical model to calculate InAlN(In)GaN HEMTs drain… CONTINUE READING
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