Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies

@article{Ekekwe2006PowerDS,
  title={Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies},
  author={Ndubuisi Ekekwe and Ralph Etienne-Cummings},
  journal={Microelectronics Journal},
  year={2006},
  volume={37},
  pages={851-860}
}
As technology scales down into the ultra deep-submicron (UDSM) region, the static power dissipations grow exponentially and become an increasingly dominant component of the total power dissipation in CMOS circuits. With increase in gate leakage current resulting from thinner gate oxides in UDSM and the problems associated with short channel effects, leakage power dissipation is becoming a huge factor challenging a continuous success of CMOS technology in the semiconductor industry. With strict… CONTINUE READING
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