Power amplifier design using GaN HEMT in class-AB mode for LTE communication band

Abstract

A high power, efficient, linear and thermally stable 5 watts power amplifier design is shown in this paper as a candidate for modern wireless industry. The designed amplifier uses GaN HEMT biased in class-AB mode and operates in LTE communication band (2.110 GHz to 2.170 GHz). Procedure adopted to achieve a realizable and first-pass design is discussed. To improve reliability, a low inductance ground technique incorporating thermal solution is also discussed. For an input signal of 2.14 GHz the amplifier provides a gain of 12.6 dB, output power of 5 watts and reaches drain efficiency of 52.8%. Moreover, linear behavior of the amplifier was tested by measuring carrier to intermodulation ratio by applying a two tone input signal. The fabricated amplifier is a low cost, industry ready design having good gain, efficiency, linearity, output power and thermal reliability.

DOI: 10.1109/IWCMC.2015.7289166

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Cite this paper

@article{Khalid2015PowerAD, title={Power amplifier design using GaN HEMT in class-AB mode for LTE communication band}, author={Nabil Khalid and Tahir Abbas and Mojeeb Bin Ihsan}, journal={2015 International Wireless Communications and Mobile Computing Conference (IWCMC)}, year={2015}, pages={685-689} }