Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region

@article{Fu2012PowerSD,
  title={Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region},
  author={Ruiyun Fu and A. Grekov and Jerry L. Hudgins and Alan Mantooth and Enrico Santi},
  journal={IEEE Transactions on Industry Applications},
  year={2012},
  volume={48},
  pages={181-190}
}
The main goal of this paper is development of a new circuit-based silicon carbide (SiC) DMOSFET model which physically represents the mechanism of current saturation in power SiC DMOSFET. Finite-element simulations show that current saturation for a typical device geometry is due to 2-D carrier distribution effects in the JFET region caused by current spreading from the channel to the JFET region. For high drain-source voltages, most of the voltage drop occurs in the current spreading region… CONTINUE READING
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