Power MOSFET temperature measurements

@article{Edelstein1982PowerMT,
  title={Power MOSFET temperature measurements},
  author={Monica D. Edelstein and David Berning},
  journal={1982 IEEE Power Electronics Specialists conference},
  year={1982},
  pages={400-407}
}
Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the on-resistance. The results are also compared with temperatures measured with an infrared microradiometer. The procedure, apparatus, and circuits required to use each of the parameters as a thermometer are described. Some general considerations for measuring the temperature of power semiconductor devices… CONTINUE READING

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Temperature measurements of semiconductor devices - a review

  • Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)
  • 2004
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HIGHLY INFLUENCED

Measurement of the Transient Thermal Impedance of MOSFETs Over the Sensitivity of the Threshold Voltage

  • 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
  • 2018
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