• Corpus ID: 27443517

Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability

  title={Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability},
  author={S. Haynie and Ann Gabrys and Taeyeop Kwon and Paul Allard and Joe Strout and Andy Strachan},
  journal={2010 22nd International Symposium on Power Semiconductor Devices \& IC's (ISPSD)},
  • S. Haynie, A. Gabrys, A. Strachan
  • Published 6 June 2010
  • Engineering
  • 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
The profile of shallow trench isolation (STI) is designed to improve LDMOS specific on-resistance (Rsp), BVDSS, safe operating area (SOA), and hot carrier lifetimes (HCL) in an integrated BiCMOS power technology. Silicon etch, liner oxidation and CMP processes are tuned to improve the tradeoffs in a power technology showing significant improvement to both p-channel and n-channel Rsp compared to devices fabricated with the STI profile inherited from the original submicron CMOS platform… 

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