Potential thermoelectric performance of hole-doped Cu2O

@article{Chen2013PotentialTP,
  title={Potential thermoelectric performance of hole-doped Cu2O},
  author={Xin Chen and David S. Parker and Mao‐Hua Du and David J. Singh},
  journal={New Journal of Physics},
  year={2013},
  volume={15}
}
High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu2O may be such a material. We find that hole-doped Cu2O has a high thermopower of above 200 μV K−1 even with doping levels as high as 5.2 × 1020 cm−3 at 500 K, mainly attributed to the… 
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