Potential and drain current modeling of surrounding gate MOSFET including polysilicon depletion


The potential drop in the polysilicon depletion layer cannot be neglected in the modeling of the nanoscale MOSFET. A continuous potential model and a potential-based drain current model taking into account the polysilicon depletion effect are developed for the fully depleted nanoscale surrounding gate MOSFET. The performance of the derived analytical models… (More)


3 Figures and Tables